Highly reflective Ag/La bilayer ohmic contacts to p-type GaN

I. Chen Chen*, Yi Dar Chen, Chih Chien Hsieh, Cheng-Huang Kuo, Li Chuan Chang


研究成果: Article同行評審

21 引文 斯高帕斯(Scopus)


A new Ag/La bilayer metal contact scheme has been developed for producing high reflectance and low contact resistivity ohmic contacts to p-GaN. An excellent reflectance of over 91% at 460 nm wavelength and low specific contact resistivity of 1.6× 10-4 ω cm2 were obtained from Ag/La (150/20 nm) contact annealed at 450°C for 1 min. The La overlayer was oxidized to form La2 O3 when exposed to air, which effectively suppresses exposure of the Ag layer to oxygen atmosphere during annealing, leading to a good ohmic contact with smooth surface morphology and high reflectance. Additionally, Ag/La contacts show excellent thermal stability after a long thermal annealing at 300°C in air ambient.

頁(從 - 到)H285-H288
期刊Journal of the Electrochemical Society
出版狀態Published - 8 2月 2011


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