摘要
A new Ag/La bilayer metal contact scheme has been developed for producing high reflectance and low contact resistivity ohmic contacts to p-GaN. An excellent reflectance of over 91% at 460 nm wavelength and low specific contact resistivity of 1.6× 10-4 ω cm2 were obtained from Ag/La (150/20 nm) contact annealed at 450°C for 1 min. The La overlayer was oxidized to form La2 O3 when exposed to air, which effectively suppresses exposure of the Ag layer to oxygen atmosphere during annealing, leading to a good ohmic contact with smooth surface morphology and high reflectance. Additionally, Ag/La contacts show excellent thermal stability after a long thermal annealing at 300°C in air ambient.
原文 | English |
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頁(從 - 到) | H285-H288 |
頁數 | 4 |
期刊 | Journal of the Electrochemical Society |
卷 | 158 |
發行號 | 3 |
DOIs | |
出版狀態 | Published - 8 2月 2011 |