Highly power efficient organic light-emitting diodes with a p-doping layer

Chan Ching Chang, Ming Ta Hsieh*, Jenn-Fang Chen, Shiao Wen Hwang, Chin H. Chen

*此作品的通信作者

研究成果: Article同行評審

142 引文 斯高帕斯(Scopus)

摘要

In this letter, the authors demonstrate p-i-n organic light-emitting diodes (OLEDs) incorporating a p -doped transport layer which comprises tungsten oxide (W O3) and 4, 4′, 4″ -tris (N -(2-naphthyl)- N -phenyl-amino) triphenylamine (2-TNATA) to replace the volatile tetrafluro- tetracyanoquinodimethane. The authors propose the 2-TNATA:W O3 composition functions as a p -doping layer which significantly improves hole injection and conductivity of the device that leads to the fabrication of tris(8- quinolinolato)aluminum based p-i-n OLEDs with long lifetime, low driving voltage (3.1 V), and high power efficiency (3.5 lmW) at 100 cd m2.

原文English
文章編號253504
期刊Applied Physics Letters
89
發行號25
DOIs
出版狀態Published - 1 12月 2006

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