摘要
We demonstrate p-i-n organic light-emitting diodes (OLEDs) incorporating a p-doped transport layer which comprises tungsten oxide (WO3) and 4,4′,4″-tris(N-(2-naphthyl)-N-phenylamino)triphenylamine (2-TNATA) to replace the volatile and low Tg F4-TCNQ. We propose the 2-TNATA:WO 3 composition functions as a p-doping layer which significantly improves holeinjection and conductivity of the Alq3 based p-i-n OLEDs with long lifetime, low driving voltage (3.1 V), and high power efficiency (3.5 lm/W) at 100 cd/m2.
原文 | English |
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頁(從 - 到) | 1106-1109 |
頁數 | 4 |
期刊 | Digest of Technical Papers - SID International Symposium |
卷 | 37 |
發行號 | 1 |
DOIs | |
出版狀態 | Published - 1 12月 2006 |
事件 | 44th International Symposium, Seminar, and Exhibition, SID 2006 - San Francisco, CA, United States 持續時間: 4 6月 2006 → 9 6月 2006 |