Highly power efficient organic light-emitting diodes with a novel P-doping layer

Chan Ching Chang*, Ming Ta Hsieh, Jenn-Fang Chen, Shiao Wen Hwang, Jia Wei Ma, Chin H. Chen

*此作品的通信作者

研究成果: Conference article同行評審

摘要

We demonstrate p-i-n organic light-emitting diodes (OLEDs) incorporating a p-doped transport layer which comprises tungsten oxide (WO3) and 4,4′,4″-tris(N-(2-naphthyl)-N-phenylamino)triphenylamine (2-TNATA) to replace the volatile and low Tg F4-TCNQ. We propose the 2-TNATA:WO 3 composition functions as a p-doping layer which significantly improves holeinjection and conductivity of the Alq3 based p-i-n OLEDs with long lifetime, low driving voltage (3.1 V), and high power efficiency (3.5 lm/W) at 100 cd/m2.

原文English
頁(從 - 到)1106-1109
頁數4
期刊Digest of Technical Papers - SID International Symposium
37
發行號1
DOIs
出版狀態Published - 1 十二月 2006
事件44th International Symposium, Seminar, and Exhibition, SID 2006 - San Francisco, CA, United States
持續時間: 4 六月 20069 六月 2006

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