摘要
Hybrid planar solar cells based on bulk n-doped Si wafers and poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate) with a back-junction geometry demonstrated an excellent power conversion efficiency of more than 11%. When a random pyramid or a Si nanowire antireflection structure was incorporated into the front of the cell surface, the power conversion efficiencies were further enhanced to 13.9% or 14.5%, respectively. Moreover, the cells with the Si nanowire antireflection structure displayed omnidirectional light-trapping characteristics over the random pyramid structures. These cells also maintained a constant power conversion efficiency even at an incident angle of 60°.
| 原文 | English |
|---|---|
| 頁(從 - 到) | 82-89 |
| 頁數 | 8 |
| 期刊 | Organic Electronics |
| 卷 | 55 |
| DOIs | |
| 出版狀態 | Published - 1 4月 2018 |