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Highly durable and flexible gallium-based oxide conductive-bridging random access memory
Kai Jhih Gan,
Po Tsun Liu
*
, Ta Chun Chien, Dun Bao Ruan, Simon M. Sze
*
此作品的通信作者
光電工程學系
研究成果
:
Article
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同行評審
43
引文 斯高帕斯(Scopus)
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Keyphrases
Oxides
100%
Highly Flexible
100%
Gallium
100%
Conductive Bridging Random Access Memory (CBRAM)
100%
Highly Durable
100%
Memory Device
80%
Ga2O3
40%
Memory Window
40%
Excellent Performance
20%
Low Thermal Budget
20%
Electronic Circuit
20%
Polyimide Substrate
20%
Low-voltage Operation
20%
Low Temperature Process
20%
Conduction Mechanism
20%
High Endurance
20%
Electrochemical Metallization
20%
Flexibility Test
20%
Temperature Coefficient of Resistance
20%
Budget Process
20%
Integrated Electronics
20%
Retention Memory
20%
Resistance Characteristics
20%
Engineering
Conductive
100%
Bridging
100%
Durables
100%
Random Access Memory
100%
Random Access Memory Device
80%
Low-Temperature
20%
Networks (Circuits)
20%
Metallizations
20%
Temperature Coefficient of the Resistance
20%
Resistance Characteristic
20%
Material Science
Oxide Compound
100%
Electronic Circuit
100%
Gallium
100%
Polyimide
100%