Highly durable and flexible gallium-based oxide conductive-bridging random access memory

Kai Jhih Gan; Po Tsun Liu; Ta Chun Chien; Dun Bao Ruan; Simon M. Sze

doi:10.1038/s41598-019-50816-7

Highly durable and flexible gallium-based oxide conductive-bridging random access memory

Kai Jhih Gan, Po Tsun Liu^*, Ta Chun Chien, Dun Bao Ruan, Simon M. Sze

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

38 引文斯高帕斯（Scopus）

摘要

The flexible conductive-bridging random access memory (CBRAM) device using a Cu/TiW/Ga₂O₃/Pt stack is fabricated on polyimide substrate with low thermal budget process. The CBRAM devices exhibit good memory-resistance characteristics, such as good memory window (>10⁵), low operation voltage, high endurance (>1.4 × 10² cycles), and large retention memory window (>10⁵). The temperature coefficient of resistance in the filament confirms that the conduction mechanism observed in the Ga₂O₃ layer is similar with the phenomenon of electrochemical metallization (ECM). Moreover, the performance of CBRAM device will not be impacted during the flexibility test. Considering the excellent performance of the CBRAM device fabricated by low-temperature process, it may provide a promising potential for the applications of flexible integrated electronic circuits.

原文	English
文章編號	14141
期刊	Scientific reports
卷	9
發行號	1
DOIs	https://doi.org/10.1038/s41598-019-50816-7
出版狀態	Published - 1 12月 2019

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abstract = "The flexible conductive-bridging random access memory (CBRAM) device using a Cu/TiW/Ga2O3/Pt stack is fabricated on polyimide substrate with low thermal budget process. The CBRAM devices exhibit good memory-resistance characteristics, such as good memory window (>105), low operation voltage, high endurance (>1.4 × 102 cycles), and large retention memory window (>105). The temperature coefficient of resistance in the filament confirms that the conduction mechanism observed in the Ga2O3 layer is similar with the phenomenon of electrochemical metallization (ECM). Moreover, the performance of CBRAM device will not be impacted during the flexibility test. Considering the excellent performance of the CBRAM device fabricated by low-temperature process, it may provide a promising potential for the applications of flexible integrated electronic circuits.",

author = "Gan, {Kai Jhih} and Liu, {Po Tsun} and Chien, {Ta Chun} and Ruan, {Dun Bao} and Sze, {Simon M.}",

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AU - Gan, Kai Jhih

AU - Liu, Po Tsun

AU - Chien, Ta Chun

AU - Ruan, Dun Bao

AU - Sze, Simon M.

PY - 2019/12/1

Y1 - 2019/12/1

N2 - The flexible conductive-bridging random access memory (CBRAM) device using a Cu/TiW/Ga2O3/Pt stack is fabricated on polyimide substrate with low thermal budget process. The CBRAM devices exhibit good memory-resistance characteristics, such as good memory window (>105), low operation voltage, high endurance (>1.4 × 102 cycles), and large retention memory window (>105). The temperature coefficient of resistance in the filament confirms that the conduction mechanism observed in the Ga2O3 layer is similar with the phenomenon of electrochemical metallization (ECM). Moreover, the performance of CBRAM device will not be impacted during the flexibility test. Considering the excellent performance of the CBRAM device fabricated by low-temperature process, it may provide a promising potential for the applications of flexible integrated electronic circuits.

AB - The flexible conductive-bridging random access memory (CBRAM) device using a Cu/TiW/Ga2O3/Pt stack is fabricated on polyimide substrate with low thermal budget process. The CBRAM devices exhibit good memory-resistance characteristics, such as good memory window (>105), low operation voltage, high endurance (>1.4 × 102 cycles), and large retention memory window (>105). The temperature coefficient of resistance in the filament confirms that the conduction mechanism observed in the Ga2O3 layer is similar with the phenomenon of electrochemical metallization (ECM). Moreover, the performance of CBRAM device will not be impacted during the flexibility test. Considering the excellent performance of the CBRAM device fabricated by low-temperature process, it may provide a promising potential for the applications of flexible integrated electronic circuits.

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Highly durable and flexible gallium-based oxide conductive-bridging random access memory

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