Highly (111) textured titanium nitride layers for sub-quarter-micrometer Al metallization

Wen Fa Wu, Chien-Cheng Lin, Chyi Chyuan Huang, Horng-Chih Lin, Ting Chang Chang, Rong Ping Yang, Tiao Yuan Huang

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

Texture improved TiN films were prepared by a two-step deposition process. A thin uncollimated TiN layer is deposited first at low substrate temperature and sputtering power. This layer has poor step coverage and high resistivity, but acts as a crystallographic seed layer for the subsequent collimated TiN layer deposited at high substrate temperature and sputtering power. The TiN layer stack is deposited sequentially without vacuum break. The resulting TiN layer has a low resistivity of 72.25 μΩ cm, high 〈111〉 preferred orientation, and improved bottom coverage in sub-quarter-micrometer contact holes and trenches.

原文English
頁(從 - 到)342-344
頁數3
期刊Electrochemical and Solid-State Letters
2
發行號7
DOIs
出版狀態Published - 1 七月 1999

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