High-voltage nLDMOS in waffle-layout style with body-injected technique for ESD protection

Wen Yi Chen; Ming-Dou Ker

doi:10.1109/LED.2009.2013368

High-voltage nLDMOS in waffle-layout style with body-injected technique for ESD protection

Wen Yi Chen^*, Ming-Dou Ker

^*此作品的通信作者

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

摘要

Electrostatic-discharge robustness of n-channel lateral DMOS (nLDMOS) has been significantly increased in this letter through the waffle-layout style with body-current injection. This body-injected technique on high-voltage nLDMOS has been successfully verified in a 0.5-μm 16-V bipolar CMOS DMOS process without additional process or mask modification. The TLP-measured results confirmed that the secondary breakdown current (I_t2) of nLDMOS has a more than 2× increase by the body-current injection.

原文	English
頁（從 - 到）	389-391
頁數	3
期刊	IEEE Electron Device Letters
卷	30
發行號	4
DOIs	https://doi.org/10.1109/LED.2009.2013368
出版狀態	Published - 24 2月 2009

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title = "High-voltage nLDMOS in waffle-layout style with body-injected technique for ESD protection",

abstract = "Electrostatic-discharge robustness of n-channel lateral DMOS (nLDMOS) has been significantly increased in this letter through the waffle-layout style with body-current injection. This body-injected technique on high-voltage nLDMOS has been successfully verified in a 0.5-μm 16-V bipolar CMOS DMOS process without additional process or mask modification. The TLP-measured results confirmed that the secondary breakdown current (It2) of nLDMOS has a more than 2× increase by the body-current injection.",

keywords = "Bipolar CMOS DMOS (BCD) process, Body-current injection, Electrostatic discharge (ESD), Lateral DMOS (LDMOS)",

author = "Chen, {Wen Yi} and Ming-Dou Ker",

year = "2009",

month = feb,

day = "24",

doi = "10.1109/LED.2009.2013368",

language = "English",

volume = "30",

pages = "389--391",

journal = "IEEE Electron Device Letters",

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T1 - High-voltage nLDMOS in waffle-layout style with body-injected technique for ESD protection

AU - Chen, Wen Yi

AU - Ker, Ming-Dou

PY - 2009/2/24

Y1 - 2009/2/24

N2 - Electrostatic-discharge robustness of n-channel lateral DMOS (nLDMOS) has been significantly increased in this letter through the waffle-layout style with body-current injection. This body-injected technique on high-voltage nLDMOS has been successfully verified in a 0.5-μm 16-V bipolar CMOS DMOS process without additional process or mask modification. The TLP-measured results confirmed that the secondary breakdown current (It2) of nLDMOS has a more than 2× increase by the body-current injection.

AB - Electrostatic-discharge robustness of n-channel lateral DMOS (nLDMOS) has been significantly increased in this letter through the waffle-layout style with body-current injection. This body-injected technique on high-voltage nLDMOS has been successfully verified in a 0.5-μm 16-V bipolar CMOS DMOS process without additional process or mask modification. The TLP-measured results confirmed that the secondary breakdown current (It2) of nLDMOS has a more than 2× increase by the body-current injection.

KW - Bipolar CMOS DMOS (BCD) process

KW - Body-current injection

KW - Electrostatic discharge (ESD)

KW - Lateral DMOS (LDMOS)

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U2 - 10.1109/LED.2009.2013368

DO - 10.1109/LED.2009.2013368

M3 - Article

AN - SCOPUS:67349106693

SN - 0741-3106

VL - 30

SP - 389

EP - 391

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

ER -

High-voltage nLDMOS in waffle-layout style with body-injected technique for ESD protection

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