High voltage lateral 4H-SiC JFETs on a semi-insulating substrate

Chih Fang Huang*, Cheng Li Kan, Tian-Li Wu, Meng Chia Lee, Yo Zthu Liu, Kung Yen Lee, Feng Zhao

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

Because of the superior material properties, silicon carbide (SiC) devices have drawn considerable attention in high power and high temperature applications. Promising performance has been demonstrated on both vertical and lateral devices [1] - [3]. In this paper, we report the performance of high voltage lateral 4H-SiC JFETs built on a semi-insulating substrate. The drift region design is based on charge compensation of the n-and p-type materials. The best achieved breakdown voltage is 3510 V, which is the highest value ever published for SiC lateral switching devices. Ron, sp is 390 mΩ-cm2, resulting in a BV2/Ron, sp of 32 MW/cm2.

原文English
主出版物標題67th Device Research Conference, DRC 2009
頁面275-276
頁數2
DOIs
出版狀態Published - 11 12月 2009
事件67th Device Research Conference, DRC 2009 - University Park, PA, United States
持續時間: 22 6月 200924 6月 2009

出版系列

名字Device Research Conference - Conference Digest, DRC
ISSN(列印)1548-3770

Conference

Conference67th Device Research Conference, DRC 2009
國家/地區United States
城市University Park, PA
期間22/06/0924/06/09

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