High voltage gain 4H-SIC CMOS technology featuring LOCal oxidation of SiC (LOCOSiC) isolation and balanced gate dielectric

Keyphrases

• CMOS Technology 100%
• Gate Dielectric 100%
• High Voltage Gain 100%
• Si CMOS 100%
• V(V) 100%
• 4H-SiC 100%
• High Performance 50%
• CMOS Process 50%
• Process Technology 50%
• Room Temperature 50%
• CMOS Inverter 50%
• On-a-chip 50%
• V-operation 50%
• Power System 50%
• Temperature Stability 50%
• Oxidation Mechanism 50%
• Gate Oxidation 50%
• SiC MOSFET Inverter 50%

Engineering

• Gate Dielectric 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Room Temperature 100%
• Temperature Stability 100%
• Power Engineering 100%
• Inverter 100%

Physics

• Room Temperature 100%
• Field Effect Transistor 100%
• Systems-on-a-Chip 100%
• Dielectric Material 100%