High voltage gain 4H-SIC CMOS technology featuring LOCal oxidation of SiC (LOCOSiC) isolation and balanced gate dielectric

Bing Yue Tsui*, Chia Lung Hung, Ya Ru Jhuang, Yi Ting Huang, Jung Chien Cheng, Fang Hsin Lu, Yi Ting Shih, Ya Hsin Lee, Liang Yu Chen, Fu Hsiang Chuang, Pei Wen Li

*此作品的通信作者

    研究成果: Conference contribution同行評審

    摘要

    We report a high performance 4H-SiC CMOS process for sub-10 V operation featuring LOCal Oxidation of SiC isolation and balanced gate oxidation process. Temperature stability of SiC MOSFETs and CMOS inverters are characterized up to 300 °C. High voltage gain of 62 V/V and 13 V/V at room temperature and 300 °C, respectively, are demonstrated. The proposed process technology is promising for SiC power system-on-a-chip.

    原文English
    主出版物標題VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings
    發行者Institute of Electrical and Electronics Engineers Inc.
    ISBN(電子)9781665419345
    DOIs
    出版狀態Published - 19 四月 2021
    事件2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 - Hsinchu, Taiwan
    持續時間: 19 四月 202122 四月 2021

    出版系列

    名字VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

    Conference

    Conference2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021
    國家/地區Taiwan
    城市Hsinchu
    期間19/04/2122/04/21

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