High-Voltage and High-Temperature Applications of DTMOS With Reverse Schottky Barrier on Substrate Contacts

Tien-Sheng Chao; Yao Jen Lee; Tiao Yuan Huang

doi:10.1109/LED.2003.822656

High-Voltage and High-Temperature Applications of DTMOS With Reverse Schottky Barrier on Substrate Contacts

Tien-Sheng Chao^*, Yao Jen Lee, Tiao Yuan Huang

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電子物理學系

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

In this letter, for the first time, application of dynamic threshold voltage MOSFET (DTMOS) with reverse Schottky barrier on substrate contacts (RSBSCs) for high voltage and high temperature is presented. By this RSBSC, DTMOS can be operated at high voltage (>0.7 V), and exhibits excellent performance at high temperature in terms of ideal subthreshold slope, low threshold voltage and high driving current.

原文	English
頁（從 - 到）	86-88
頁數	3
期刊	IEEE Electron Device Letters
卷	25
發行號	2
DOIs	https://doi.org/10.1109/LED.2003.822656
出版狀態	Published - 1 2月 2004

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10.1109/LED.2003.822656

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abstract = "In this letter, for the first time, application of dynamic threshold voltage MOSFET (DTMOS) with reverse Schottky barrier on substrate contacts (RSBSCs) for high voltage and high temperature is presented. By this RSBSC, DTMOS can be operated at high voltage (>0.7 V), and exhibits excellent performance at high temperature in terms of ideal subthreshold slope, low threshold voltage and high driving current.",

keywords = "Dynamic threshold voltage MOSFET (DTMOS), Schottky substrate junction, Temperature effect",

author = "Tien-Sheng Chao and Lee, {Yao Jen} and Huang, {Tiao Yuan}",

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AU - Lee, Yao Jen

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PY - 2004/2/1

Y1 - 2004/2/1

N2 - In this letter, for the first time, application of dynamic threshold voltage MOSFET (DTMOS) with reverse Schottky barrier on substrate contacts (RSBSCs) for high voltage and high temperature is presented. By this RSBSC, DTMOS can be operated at high voltage (>0.7 V), and exhibits excellent performance at high temperature in terms of ideal subthreshold slope, low threshold voltage and high driving current.

AB - In this letter, for the first time, application of dynamic threshold voltage MOSFET (DTMOS) with reverse Schottky barrier on substrate contacts (RSBSCs) for high voltage and high temperature is presented. By this RSBSC, DTMOS can be operated at high voltage (>0.7 V), and exhibits excellent performance at high temperature in terms of ideal subthreshold slope, low threshold voltage and high driving current.

KW - Dynamic threshold voltage MOSFET (DTMOS)

KW - Schottky substrate junction

KW - Temperature effect

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DO - 10.1109/LED.2003.822656

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

High-Voltage and High-Temperature Applications of DTMOS With Reverse Schottky Barrier on Substrate Contacts

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