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High transmittance silicon terahertz polarizer using wafer bonding technology
Ting Yang Yu
, Hsin Cheng Tsai
, Shiang Yu Wang
,
Chih-Wei Luo
,
Kuan-Neng Chen
*
*
此作品的通信作者
電子物理學系
研究成果
:
Conference contribution
›
同行評審
2
引文 斯高帕斯(Scopus)
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Keyphrases
High Transmittance
100%
Antireflection Layer
100%
Wafer Bonding Technology
100%
Terahertz Polarizer
100%
Polarizer
66%
Central Frequency
66%
Terahertz
66%
Sn Solder
66%
Deep Reactive Ion Etching
66%
Robust Structure
66%
Wire Grid Polarizer
66%
Wafer
33%
Low Temperature
33%
Wafer Level
33%
Refractive Index
33%
Transmittance
33%
Cost Reduction
33%
Silicon Wafer
33%
Grating
33%
Humidity
33%
Corrosion
33%
Cu Wire
33%
Effective Refractive Index
33%
Optical Components
33%
Extinction Ratio
33%
Metal Bond
33%
Square Root
33%
Guard Ring
33%
Fresnel Reflection Loss
33%
Terahertz Time-domain Spectroscopy (THz-TDS)
33%
Optical Alignment
33%
Terahertz Systems
33%
Eutectic Melting
33%
Wire Grating
33%
Empty Hole
33%
Engineering
Terahertz
100%
Bonding Technology
100%
Wafer Bonding
100%
Central Frequency
33%
Deep Reactive Ion Etching
33%
Low-Temperature
16%
Time Domain
16%
Refractive Index
16%
Square Root
16%
Silicon Wafer
16%
Reflection Loss
16%
Extinction Ratio
16%
Effective Refractive Index
16%
Eutectic Melting
16%
Refractivity
16%
Melting Point
16%
Material Science
Polarizer
100%
Silicon
100%
Reactive Ion Etching
33%
Refractive Index
33%
Oxidation Reaction
16%
Optical Device
16%
Silicon Wafer
16%
Corrosion
16%
Surface (Surface Science)
16%