High transmittance silicon terahertz polarizer using wafer bonding technology

Ting Yang Yu, Hsin Cheng Tsai, Shiang Yu Wang, Chih-Wei Luo, Kuan-Neng Chen*

*此作品的通信作者

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

Due to the difficulties faced in fabricating robust Terahertz (THz) optical components with low Fresnel reflection loss, the need to increase the efficiency of THz system with reduced cost is still considered as one of the most essential tasks. In this report, a new low cost THz polarizer with robust structure is proposed and demonstrated. This new THz wire grid polarizer was based on an anti-reflection (AR) layer fabricated with low temperature metal bonding and deep reactive ion etching (DRIE). After patterning Cu wire gratings and the corresponding In/Sn solder ring on the individual silicon wafers, the inner gratings were sealed by wafer-level Cu to In/Sn guard ring bonding, providing the protection against humidity oxidation and corrosion. With the low eutectic melting point of In/Sn solder, wafers could be bonded face to face below 150°C. Two anti-reflection layers on both outward surfaces were fabricated by DRIE. With the mixing of empty holes and silicon, the effective refractive index was designed to be the square root of the silicon refractive index. The central frequency of the anti-reflection layers was designed between 0.5THz to 2THz with an approximate bandwidth of 0.5THz. The samples were measured with a commercial free-standing wire grid polarizer by a THz time domain spectroscopy (THz-TDS) from 0.2THz to 2.2THz. The power transmittance is close to 100% at central frequency. Extinction ratio of the polarizer is between 20dB to 40dB depending on the frequency. The advantages of this new polarizer include high transmittance, robust structure and low cost with no precision optical alignment required.

原文English
主出版物標題Terahertz Emitters, Receivers, and Applications VI
編輯Alexei N. Baranov, Manijeh Razeghi, Dimitris Pavlidis, John M. Zavada
發行者SPIE-INT SOC OPTICAL ENGINEERING
頁數7
ISBN(電子)9781628417517
DOIs
出版狀態Published - 2015
事件Terahertz Emitters, Receivers, and Applications VI - San Diego, 美國
持續時間: 9 8月 201510 8月 2015

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
9585
ISSN(列印)0277-786X
ISSN(電子)1996-756X

Conference

ConferenceTerahertz Emitters, Receivers, and Applications VI
國家/地區美國
城市San Diego
期間9/08/1510/08/15

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