High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability

Shun Wei Tang, Zhen Hong Huang, Szu Chia Chen, Wei Syuan Lin, Brice De Jaeger, Dirk Wellekens, Matteo Borga, Benoit Bakeroot, Stefaan Decoutere, Tian Li Wu*

*此作品的通信作者

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

In this work, we demonstrate enhancement-mode regrown p-GaN gate devices with high threshold voltage as well as a robust forward time-dependent gate breakdown (TDGB) stability. The regrown p-GaN gate HEMTs are fabricated with two different AlGaN barriers. Devices with 16nm Al0.235 Ga0.765 N yield a V TH of 1.5V and a high threshold voltage ( V TH ) of 2.7V is observed for 7nm AlGaN along with a gate breakdown voltage of more than 10V. Lastly, the regrown p-GaN gate HEMTs with 7nm AlGaN barrier demonstrate an operating V G of 7.46V and 7V for 1% failure rate of 10-year lifetime at 150°C and 25°C, which is amongst the highest values compared to the reported literature for regrown p-GaN gate HEMTs.

原文English
頁(從 - 到)1625-1628
頁數4
期刊Ieee Electron Device Letters
43
發行號10
DOIs
出版狀態Published - 1 10月 2022

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