High thermally stable AlGaN/GaN high electron mobility transistors (HEMTs) on bulk semi-insulating GaN substrates

Hao Yu Wang, Hsien Chin Chiu*, Chong Rong Huang, Hao Chung Kuo, Sung Wen Huang Chen, Xinke Liu

*此作品的通信作者

研究成果: Paper同行評審

摘要

In this study, a AlGaN/GaN high-electron-mobility transistor (HEMT) grown on the bulk GaN substrate was demonstrated and compared against one grown on the SiC substrate. Results of X-ray diffraction and reciprocal space mapping revealed that the bulk GaN substrate structure exhibited less lattice dislocation. The GaN substrate device demonstrated better IDS–VGS and gm–VGS characteristics of IDS = 700 mA/mm at VGS = +2 V and gmmax = 148 mS/mm. Compared with the SiC substrate, the current density in the HEMT grown on GaN was improved. The GaN substrate also improved current collapse and dynamic ON-state resistance due to a decrease in the trapping effect. The low-frequency noise and Hooge results also indicated that the GaN substrate had lower lattice dislocation.

原文English
頁數4
出版狀態Published - 4月 2019
事件2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, United States
持續時間: 29 4月 20192 5月 2019

Conference

Conference2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019
國家/地區United States
城市Minneapolis
期間29/04/192/05/19

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