In this study, a AlGaN/GaN high-electron-mobility transistor (HEMT) grown on the bulk GaN substrate was demonstrated and compared against one grown on the SiC substrate. Results of X-ray diffraction and reciprocal space mapping revealed that the bulk GaN substrate structure exhibited less lattice dislocation. The GaN substrate device demonstrated better IDS–VGS and gm–VGS characteristics of IDS = 700 mA/mm at VGS = +2 V and gmmax = 148 mS/mm. Compared with the SiC substrate, the current density in the HEMT grown on GaN was improved. The GaN substrate also improved current collapse and dynamic ON-state resistance due to a decrease in the trapping effect. The low-frequency noise and Hooge results also indicated that the GaN substrate had lower lattice dislocation.
|Published - 4月 2019
|2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, United States
持續時間: 29 4月 2019 → 2 5月 2019
|2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019
|29/04/19 → 2/05/19