High thermal stability metal gate with tunable work function

Chih Feng Huang*, Bing-Yue Tsui

*此作品的通信作者

    研究成果: Paper同行評審

    1 引文 斯高帕斯(Scopus)

    摘要

    It has been reported that the work function of Ta-Pt alloys is tunable and Ta-Pt is a possible gate material for CMOS devices. In this work, we demonstrate that the Ta-Pt alloy is thermally stable up to 900°C. The impact of oxygen contamination and thermal stress on the stability of the MOS structure with the alloy gate is also discussed. It is concluded that the Ta-Pt alloy is a good candidate for gate electrode in the nanoscale CMOS regime and is compatible with the conventional self-aligned process.

    原文English
    頁面451-454
    頁數4
    DOIs
    出版狀態Published - 5月 2004
    事件Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004 - Nis
    持續時間: 16 5月 200419 5月 2004

    Conference

    ConferenceProceedings - 2004 24th International Conference on Microelectronics, MIEL 2004
    城市Nis
    期間16/05/0419/05/04

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