摘要
It has been reported that the work function of Ta-Pt alloys is tunable and Ta-Pt is a possible gate material for CMOS devices. In this work, we demonstrate that the Ta-Pt alloy is thermally stable up to 900°C. The impact of oxygen contamination and thermal stress on the stability of the MOS structure with the alloy gate is also discussed. It is concluded that the Ta-Pt alloy is a good candidate for gate electrode in the nanoscale CMOS regime and is compatible with the conventional self-aligned process.
原文 | English |
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頁面 | 451-454 |
頁數 | 4 |
DOIs | |
出版狀態 | Published - 5月 2004 |
事件 | Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004 - Nis 持續時間: 16 5月 2004 → 19 5月 2004 |
Conference
Conference | Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004 |
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城市 | Nis |
期間 | 16/05/04 → 19/05/04 |