High-temperature stability of platinum silicide associated with fluorine implantation

Jiunn Yann Tsai*, Bing-Yue Tsui, Mao Chieh Chen

*此作品的通信作者

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

High-temperature stability of the F+- or BF+ 2 -implanted PtSi thin film was investigated. For the PtSi films that received F+ implantation, the film characteristics remain unchanged even after annealing at 800 °C for 90 min, while for those without F + implantation, the film properties begin to degrade after annealing at 750 °C as observed by scanning electron microscopic inspection, Auger electron spectroscopy analysis, Rutherford backscattering spectroscopy analysis, and sheet resistance measurement. The secondary ion mass spectroscopy analysis indicates that the fluorine atoms are segregated to the PtSi/Si interface. A fluorine barrier model is proposed to explain the absence of Pt in-diffusion induced deterioration for the F+-implanted PtSi film.

原文English
頁(從 - 到)3530-3533
頁數4
期刊Journal of Applied Physics
67
發行號7
DOIs
出版狀態Published - 1 12月 1990

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