High-temperature stability of lasing wavelength in GaAsSb/GaAs double quantum wells lasers

Hsin-Chieh Yu*, Cheng Tien Wan, Yan Kuin Su, Ricky W. Chuang, Wei Cheng Chen, Chun Yuan Huang, Wei Hung Lin, Manfred H. Pilkuhn

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

High-temperature stability of lasing wavelength of GaAsSb/GaAs quantum well (QW) lasers grown by metal-organic vapor phase epitaxy will be demonstrated. According to the best of our knowledge, this is the first trial of using triethylgallium (TEGa) as the precursor to grow QW at low temperature (525°C). The lasing wavelength ranges from 1117 to 1144 nm and varies with temperature (dλ/dT) from 0.24 to 0.287 nm/K. These values are lower than other previously reported results. The QW grown at high temperature (600°C) by using trimethylgallium (TMGa) is also examined. The lasing wavelength is 1125.6 nm at room temperature and dλ/dT is 0.36 nm/K, which is higher than those lasers grown at lower temperature.

原文English
主出版物標題Optical Components and Materials VII
DOIs
出版狀態Published - 3 五月 2010
事件Optical Components and Materials VII - San Francisco, CA, United States
持續時間: 26 一月 201028 一月 2010

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
7598
ISSN(列印)0277-786X

Conference

ConferenceOptical Components and Materials VII
國家/地區United States
城市San Francisco, CA
期間26/01/1028/01/10

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