High-temperature healing of interfacial voids in GaAs wafer bonding

Yew-Chuhg Wu*, Po Chun Liu, R. S. Feigelson, R. K. Route

*此作品的通信作者

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

Artificial voids were introduced at bonding interfaces to study how processing parameters affected the healing mechanism of interfacial voids in GaAs wafer bonding. These voids were created by placing unpatterned wafers in contact with topographically patterned wafers. During the bonding process, crystallites formed within these voids and corresponded to bonded regions within the voids. Their formation depended strongly on the height of the surface irregularities at the wafer interfaces. When the void depth (h) was ≥200 nm, most of the crystallites were diamond shaped. The edges of the diamond features were elongated in the 〈100〉 direction. On the other hand, when the void depth was small (h≤70nm), dendrites grew quickly in the 〈110〉 direction.

原文English
頁(從 - 到)1973-1977
頁數5
期刊Journal of Applied Physics
91
發行號3
DOIs
出版狀態Published - 15 2月 2002

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