High temperature behaviour of GaN-on-Si high power MISHEMT devices

Dirk Wellekens*, Rafael Venegas, Xuanwu Kang, Mohammed Zahid, Tian-Li Wu, Denis Marcon, Puneet Srivastava, Marleen Van Hove, Stefaan Decoutere

*此作品的通信作者

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

The device performance of GaN-on-Si AlGaN/GaN MISHEMT devices with a Si3N4/Al2O3 bi-layer gate dielectric is studied as a function of temperature. In addition to the temperature dependence of the key DC parameters, which are also benchmarked against a silicon VDMOS device, special attention is paid to the behaviour under operating conditions, including thermal stability, switching behaviour and reliability.

原文English
主出版物標題2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012
頁面302-305
頁數4
DOIs
出版狀態Published - 2012
事件42nd European Solid-State Device Research Conference, ESSDERC 2012 - Bordeaux, France
持續時間: 17 9月 201221 9月 2012

出版系列

名字European Solid-State Device Research Conference
ISSN(列印)1930-8876

Conference

Conference42nd European Solid-State Device Research Conference, ESSDERC 2012
國家/地區France
城市Bordeaux
期間17/09/1221/09/12

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