@article{95d60b1b1ea34fb4b6c4e5a812b12f6c,
title = "High-speed multilevel wrapped-select-gate SONOS memory using a novel dynamic",
abstract = "A high programming speed with a low-powerconsumption wrapped-select-gate poly-Si-oxide-nitride-oxidesilicon memory is successfully demonstrated using the novel dynamic threshold source-side-injection programming technique. The select gate embedded in such particular memory structure acts like a dynamic MOSFET resulting in programming current (IPGM) that can be enhanced in this DT mode, easily attaining a high programming speed of about 100 ns. It still doubles the memory density by achieving the 2-bit/cell operation with MLC under DT mode.",
keywords = "Dynamic-threshold, Memory, Poly-Si-oxidenitride-oxide-silicon (SONOS)",
author = "Wang, {Kuan Ti} and Tien-Sheng Chao and Wu, {Woei Cherng} and Chiang, {Tsung Yu} and Wu, {Yi Hong} and Yang, {Wen Luh} and Lee, {Chien Hsing} and Hsieh, {Tsung Min} and Liou, {Jhyy Cheng} and Wang, {Shen De} and Chen, {Tzu Ping} and Chen, {Chien Hung} and Lin, {Chih Hung} and Chen, {Hwi Huang}",
year = "2009",
doi = "10.1109/LED.2009.2019255",
language = "English",
volume = "30",
pages = "659--661",
journal = "Ieee Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",
}