High-speed (ft = 78ghz) alinas/gainas single heterojunction hbt

C. W. Farley, Mau-Chung Chang, P. M. Asbeck, N. H. Sheng, R. Pierson, G. J. Sullivan, K. C. Wang, R. B. Nubling

    研究成果: Article同行評審

    11 引文 斯高帕斯(Scopus)

    摘要

    High-performance AlInAs/GaInAs HBTs for low-power digital circuits have been demonstrated. Large-area devices exhibit high current gain (up to 600), observable down to low currents. Small-area devices display ƒt up to 78 GHz and ƒmax up to 45 GHz. Fitting S-parameter measurements to an equivalent circuit model shows that ƒmax is limited by a large RbCbc time constant in the base circuit. These transistors have been used to fabricate the first frequency divider demonstrated in this material system.

    原文English
    頁(從 - 到)846-847
    頁數2
    期刊Electronics Letters
    25
    發行號13
    DOIs
    出版狀態Published - 22 6月 1989

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