High-Speed Electro-Absorption Modulated Laser at 1.3 μm Wavelength Based on Selective Area Growth Technique

Zohauddin Ahmad; Rui Lin Chao; Yung Jr Hung; Jyehong Chen; Chia Chien Wei; Jin Wei Shi

doi:10.1109/IPCon.2019.8908442

High-Speed Electro-Absorption Modulated Laser at 1.3 μm Wavelength Based on Selective Area Growth Technique

Zohauddin Ahmad, Rui Lin Chao, Yung Jr Hung, Jyehong Chen, Chia Chien Wei, Jin Wei Shi

光電工程學系

研究成果: Conference contribution › 同行評審

1 引文斯高帕斯（Scopus）

摘要

We demonstrate In_xAl_yGa_1-x-yAs based electro-absorption modulated DFB laser at 1.3 μm wavelength based on selective area growth technique. The fabricated device exhibits 5 mW output power, wide E-O bandwidth (>40 GHz), 2V driving-voltage for 10 dB extinction ratio, and clear eye-opening at 32Gbit/sec.

原文	English
主出版物標題	2019 IEEE Photonics Conference, IPC 2019 - Proceedings
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781728106151
DOIs	https://doi.org/10.1109/IPCon.2019.8908442
出版狀態	Published - 9月 2019
事件	2019 IEEE Photonics Conference, IPC 2019 - San Antonio, United States 持續時間: 29 9月 2019 → 3 10月 2019

出版系列

名字	2019 IEEE Photonics Conference, IPC 2019 - Proceedings

Conference

Conference	2019 IEEE Photonics Conference, IPC 2019
國家/地區	United States
城市	San Antonio
期間	29/09/19 → 3/10/19

存取文件

10.1109/IPCon.2019.8908442

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Link to publication in Scopus

引用此

Ahmad, Z., Chao, R. L., Hung, Y. J., Chen, J., Wei, C. C., & Shi, J. W. (2019). High-Speed Electro-Absorption Modulated Laser at 1.3 μm Wavelength Based on Selective Area Growth Technique. 於 2019 IEEE Photonics Conference, IPC 2019 - Proceedings Article 8908442 (2019 IEEE Photonics Conference, IPC 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPCon.2019.8908442

@inproceedings{713026057e9e4bea89467b9b70fd808c,

title = "High-Speed Electro-Absorption Modulated Laser at 1.3 μm Wavelength Based on Selective Area Growth Technique",

abstract = "We demonstrate InxAlyGa1-x-yAs based electro-absorption modulated DFB laser at 1.3 μm wavelength based on selective area growth technique. The fabricated device exhibits 5 mW output power, wide E-O bandwidth (>40 GHz), 2V driving-voltage for 10 dB extinction ratio, and clear eye-opening at 32Gbit/sec.",

author = "Zohauddin Ahmad and Chao, {Rui Lin} and Hung, {Yung Jr} and Jyehong Chen and Wei, {Chia Chien} and Shi, {Jin Wei}",

year = "2019",

month = sep,

doi = "10.1109/IPCon.2019.8908442",

language = "English",

series = "2019 IEEE Photonics Conference, IPC 2019 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 IEEE Photonics Conference, IPC 2019 - Proceedings",

address = "United States",

note = "2019 IEEE Photonics Conference, IPC 2019 ; Conference date: 29-09-2019 Through 03-10-2019",

}

Ahmad, Z, Chao, RL, Hung, YJ, Chen, J, Wei, CC & Shi, JW 2019, High-Speed Electro-Absorption Modulated Laser at 1.3 μm Wavelength Based on Selective Area Growth Technique. 於 2019 IEEE Photonics Conference, IPC 2019 - Proceedings., 8908442, 2019 IEEE Photonics Conference, IPC 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE Photonics Conference, IPC 2019, San Antonio, United States, 29/09/19. https://doi.org/10.1109/IPCon.2019.8908442

High-Speed Electro-Absorption Modulated Laser at 1.3 μm Wavelength Based on Selective Area Growth Technique. / Ahmad, Zohauddin; Chao, Rui Lin; Hung, Yung Jr 等.
2019 IEEE Photonics Conference, IPC 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8908442 (2019 IEEE Photonics Conference, IPC 2019 - Proceedings).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - High-Speed Electro-Absorption Modulated Laser at 1.3 μm Wavelength Based on Selective Area Growth Technique

AU - Ahmad, Zohauddin

AU - Chao, Rui Lin

AU - Hung, Yung Jr

AU - Chen, Jyehong

AU - Wei, Chia Chien

AU - Shi, Jin Wei

PY - 2019/9

Y1 - 2019/9

N2 - We demonstrate InxAlyGa1-x-yAs based electro-absorption modulated DFB laser at 1.3 μm wavelength based on selective area growth technique. The fabricated device exhibits 5 mW output power, wide E-O bandwidth (>40 GHz), 2V driving-voltage for 10 dB extinction ratio, and clear eye-opening at 32Gbit/sec.

AB - We demonstrate InxAlyGa1-x-yAs based electro-absorption modulated DFB laser at 1.3 μm wavelength based on selective area growth technique. The fabricated device exhibits 5 mW output power, wide E-O bandwidth (>40 GHz), 2V driving-voltage for 10 dB extinction ratio, and clear eye-opening at 32Gbit/sec.

UR - http://www.scopus.com/inward/record.url?scp=85075898519&partnerID=8YFLogxK

U2 - 10.1109/IPCon.2019.8908442

DO - 10.1109/IPCon.2019.8908442

M3 - Conference contribution

AN - SCOPUS:85075898519

T3 - 2019 IEEE Photonics Conference, IPC 2019 - Proceedings

BT - 2019 IEEE Photonics Conference, IPC 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 IEEE Photonics Conference, IPC 2019

Y2 - 29 September 2019 through 3 October 2019

ER -

Ahmad Z, Chao RL, Hung YJ, Chen J, Wei CC, Shi JW. High-Speed Electro-Absorption Modulated Laser at 1.3 μm Wavelength Based on Selective Area Growth Technique. 於 2019 IEEE Photonics Conference, IPC 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8908442. (2019 IEEE Photonics Conference, IPC 2019 - Proceedings). doi: 10.1109/IPCon.2019.8908442

High-Speed Electro-Absorption Modulated Laser at 1.3 μm Wavelength Based on Selective Area Growth Technique

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