High-sensitivity plasma-induced etch damage of water-bonded AlGaInP/mirror/Si light-emitting diodes

D. S. Wuu*, Ray-Hua Horng, S. H. Huang, C. R. Chung

*此作品的通信作者

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6 引文 斯高帕斯(Scopus)

摘要

Inductively coupled plasma etch of wafer-bonded AlGaInP/mirror/Si LEDs using Cl2/N2 gas mixtures was studied in terms of etch rate, selectivity, and etch-induced damage. It was found that the duration of plasma treatment has a large effect on the performance of wafer-bonded AlGaInP LEDs. Plasma-induced damage effectively recovered by rapid thermal annealing at 450°C. The suppression of dc self-bias at high plasma density provided the essential condition for low-damage anisotropic etching.

原文English
頁(從 - 到)766-771
頁數6
期刊Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
20
發行號3
DOIs
出版狀態Published - 1 5月 2002

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