@inproceedings{dc5601e6db3d4397832332311847f769,
title = "High-robust ESD protection structure with embedded SCR in high-voltage CMOS process",
abstract = "The dependence of device structures and layout parameters on ESD robustness of HV MOSFETs in high-voltage 40-V CMOS process has been investigated by device simulation and verified in silicon test chips. It was demonstrated that a new ESD protection structure with p-type SCR embedded into the HV PMOS has the highest ESD robustness in a given 40-V CMOS process.",
author = "Lai, {Tai Hsiang} and Ming-Dou Ker and Chang, {Wei Jen} and Tang, {Tien Hao} and Su, {Kuan Cheng}",
year = "2008",
month = sep,
day = "17",
doi = "10.1109/RELPHY.2008.4558959",
language = "English",
isbn = "9781424420506",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "627--628",
booktitle = "46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS",
note = "46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS ; Conference date: 27-04-2008 Through 01-05-2008",
}