High-reflectivity AlAs0.52Sb0.48/GaInAs(P) distributed bragg mirror on inp substrate for 1.3-1.55μm wavelengths

K. Tai; R. J. Fischer; A. Y. Cho; Kai-Feng Huang

doi:10.1049/el:19890778

High-reflectivity AlAs_0.52Sb_0.48/GaInAs(P) distributed bragg mirror on inp substrate for 1.3-1.55μm wavelengths

K. Tai, R. J. Fischer, A. Y. Cho, Kai-Feng Huang

電子物理學系

研究成果: Article › 同行評審

19 引文斯高帕斯（Scopus）

摘要

Periodic AlAs_0.52Sb_0.48/Ga_0.47In_0.53As quarter-wave distributed Bragg reflectors on InP substrates were prepared and with only eight pairs a peak reflectivity of 90% and a bandwidth of ≥0.2μm were measured. By the addition of P to the GaInAs alloy, this mirror structure would be useful for InP-based surface emitting laser application at 1.3-1.55 μm wavelengths and would be superior to the previously studied GaInAsP/InP structure, where ∼20 pairs are required to achieve similar reflection.

原文	English
頁（從 - 到）	1159-1160
頁數	2
期刊	Electronics Letters
卷	25
發行號	17
DOIs	https://doi.org/10.1049/el:19890778
出版狀態	Published - 17 8月 1989

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10.1049/el:19890778

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title = "High-reflectivity AlAs0.52Sb0.48/GaInAs(P) distributed bragg mirror on inp substrate for 1.3-1.55μm wavelengths",

abstract = "Periodic AlAs0.52Sb0.48/Ga0.47In0.53As quarter-wave distributed Bragg reflectors on InP substrates were prepared and with only eight pairs a peak reflectivity of 90% and a bandwidth of ≥0.2μm were measured. By the addition of P to the GaInAs alloy, this mirror structure would be useful for InP-based surface emitting laser application at 1.3-1.55 μm wavelengths and would be superior to the previously studied GaInAsP/InP structure, where ∼20 pairs are required to achieve similar reflection.",

keywords = "Quantum optics, Semiconductor devices and materials, Semiconductor lasers",

author = "K. Tai and Fischer, {R. J.} and Cho, {A. Y.} and Kai-Feng Huang",

year = "1989",

month = aug,

day = "17",

doi = "10.1049/el:19890778",

language = "English",

volume = "25",

pages = "1159--1160",

journal = "Electronics Letters",

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publisher = "Institution of Engineering and Technology",

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T1 - High-reflectivity AlAs0.52Sb0.48/GaInAs(P) distributed bragg mirror on inp substrate for 1.3-1.55μm wavelengths

AU - Tai, K.

AU - Fischer, R. J.

AU - Cho, A. Y.

AU - Huang, Kai-Feng

PY - 1989/8/17

Y1 - 1989/8/17

N2 - Periodic AlAs0.52Sb0.48/Ga0.47In0.53As quarter-wave distributed Bragg reflectors on InP substrates were prepared and with only eight pairs a peak reflectivity of 90% and a bandwidth of ≥0.2μm were measured. By the addition of P to the GaInAs alloy, this mirror structure would be useful for InP-based surface emitting laser application at 1.3-1.55 μm wavelengths and would be superior to the previously studied GaInAsP/InP structure, where ∼20 pairs are required to achieve similar reflection.

AB - Periodic AlAs0.52Sb0.48/Ga0.47In0.53As quarter-wave distributed Bragg reflectors on InP substrates were prepared and with only eight pairs a peak reflectivity of 90% and a bandwidth of ≥0.2μm were measured. By the addition of P to the GaInAs alloy, this mirror structure would be useful for InP-based surface emitting laser application at 1.3-1.55 μm wavelengths and would be superior to the previously studied GaInAsP/InP structure, where ∼20 pairs are required to achieve similar reflection.

KW - Quantum optics

KW - Semiconductor devices and materials

KW - Semiconductor lasers

UR - http://www.scopus.com/inward/record.url?scp=0024716166&partnerID=8YFLogxK

U2 - 10.1049/el:19890778

DO - 10.1049/el:19890778

M3 - Article

AN - SCOPUS:0024716166

VL - 25

SP - 1159

EP - 1160

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 17

ER -

High-reflectivity AlAs0.52Sb0.48/GaInAs(P) distributed bragg mirror on inp substrate for 1.3-1.55μm wavelengths

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High-reflectivity AlAs_0.52Sb_0.48/GaInAs(P) distributed bragg mirror on inp substrate for 1.3-1.55μm wavelengths