@inproceedings{10dd1ddec1b64bd2aee11fa3d9852d54,
title = "High reflectance contacts to P-type GaN using Ag-La Alloys",
abstract = "In this study, we have investigated a new Ag-La alloy contact to p-type GaN for producing high reflectance and low contact resistivity ohmic contacts. A low specific contact resistivity of 5.87×10-5 ω cm and high light reflectance of 85% at 460 nm could be obtained from Ag-La alloy contacts after annealed at 350 oC in air ambient. The formation of lanthanum oxide suppresses the Ag oxidation during annealing process and leads to a good ohmic contact with high reflectance. Additionally, compared with pure Ag contacts, the Ag-La alloy contacts show better thermal stability after a long thermal annealing at 300°C in air ambient.",
author = "Cheng, {Bo Yuan} and Chen, {I. Chen} and Cheng-Huang Kuo and Chang, {Li Chuan}",
year = "2012",
doi = "10.1149/1.3694462",
language = "English",
isbn = "9781607683186",
series = "ECS Transactions",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",
pages = "1291--1294",
booktitle = "China Semiconductor Technology International Conference 2012, CSTIC 2012",
address = "United States",
edition = "1",
note = "China Semiconductor Technology International Conference 2012, CSTIC 2012 ; Conference date: 18-03-2012 Through 19-03-2012",
}