摘要
High-Tc Josephson junctions have been fabricated by direct electron beam writing over YBa2Cu3O7 thin-film microbridges, using scanning transmission electron microscope (STEM) with an accelerating voltage of 80-120 kV. Annealing at 330-380 K increases T c and Ic of the junctions and makes them more stable. In the operating range of a few degrees below Tc, the junctions show 100% magnetic field modulation of the critical current, microwave-induced Shapiro steps oscillating according to the resistively shunted junction (RSJ) model, and RSJ current-voltage characteristics with IcRn product up to 0.5-0.6 mV at 75 K and 0.3 mV at 77 K.
原文 | English |
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頁(從 - 到) | 1696-1698 |
頁數 | 3 |
期刊 | Applied Physics Letters |
卷 | 63 |
發行號 | 12 |
DOIs | |
出版狀態 | Published - 1 12月 1993 |