High quality ultrathin CoTiO3 high-k gate dielectrics

Tung Ming Pan; Tan Fu Lei; Tien-Sheng Chao; Kuo Lih Chang; Kuang Chien Hsieh

doi:10.1149/1.1391170

High quality ultrathin CoTiO₃ high-k gate dielectrics

Tung Ming Pan, Tan Fu Lei, Tien-Sheng Chao, Kuo Lih Chang, Kuang Chien Hsieh

電子物理學系

研究成果: Article › 同行評審

14 引文斯高帕斯（Scopus）

摘要

A novel high-k cobalt-titanium oxide (CoTiO₃) was formed by directly oxidizing sputtered Co/Ti film. Al/CoTiO₃Si₃N₄/Si capacitor structure was fabricated and measured. The effective dielectric constant with buffered layer for CoTiO₃ gate dielectric can reach as high as 40 while depicting excellent electrical properties at the same time. This novel metal oxide thus appears to be a promising high-k gate dielectric for future ultralarge scale integrated devices.

原文	English
頁（從 - 到）	433-434
頁數	2
期刊	Electrochemical and Solid-State Letters
卷	3
發行號	9
DOIs	https://doi.org/10.1149/1.1391170
出版狀態	Published - 1 9月 2000

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10.1149/1.1391170

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abstract = "A novel high-k cobalt-titanium oxide (CoTiO3) was formed by directly oxidizing sputtered Co/Ti film. Al/CoTiO3Si3N4/Si capacitor structure was fabricated and measured. The effective dielectric constant with buffered layer for CoTiO3 gate dielectric can reach as high as 40 while depicting excellent electrical properties at the same time. This novel metal oxide thus appears to be a promising high-k gate dielectric for future ultralarge scale integrated devices.",

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AU - Pan, Tung Ming

AU - Lei, Tan Fu

AU - Chao, Tien-Sheng

AU - Chang, Kuo Lih

AU - Hsieh, Kuang Chien

PY - 2000/9/1

Y1 - 2000/9/1

N2 - A novel high-k cobalt-titanium oxide (CoTiO3) was formed by directly oxidizing sputtered Co/Ti film. Al/CoTiO3Si3N4/Si capacitor structure was fabricated and measured. The effective dielectric constant with buffered layer for CoTiO3 gate dielectric can reach as high as 40 while depicting excellent electrical properties at the same time. This novel metal oxide thus appears to be a promising high-k gate dielectric for future ultralarge scale integrated devices.

AB - A novel high-k cobalt-titanium oxide (CoTiO3) was formed by directly oxidizing sputtered Co/Ti film. Al/CoTiO3Si3N4/Si capacitor structure was fabricated and measured. The effective dielectric constant with buffered layer for CoTiO3 gate dielectric can reach as high as 40 while depicting excellent electrical properties at the same time. This novel metal oxide thus appears to be a promising high-k gate dielectric for future ultralarge scale integrated devices.

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ER -

High quality ultrathin CoTiO3 high-k gate dielectrics

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High quality ultrathin CoTiO₃ high-k gate dielectrics