TY - JOUR
T1 - High quality ultra-thin (2.4nm) oxide prepared by clustered vertical furnace with in-situ HF-vapor pre-gate oxide cleaning
AU - Chao, Tien-Sheng
AU - Chen, J. L.
AU - Lai, C. S.
AU - Lin, Horng-Chih
AU - Huang, T. Y.
PY - 1999/1/1
Y1 - 1999/1/1
N2 - In this paper, we grow and characterize in detail native-oxide-free ultra-thin gate oxide (Tox=2.4nm) by an advance clustered vertical furnace with in-situ HF-vapor stripping of the native oxide. Excellent results are demonstrated. Gate oxide integrity is significantly improved in terms of leakage, time-to-breakdown, breakdown field, interface-state-density, stress-induced leakage current, Id, and Gm. In-situ HF-vapor cleaning by a clustered vertical furnace therefore appears to be very promising to grow high-quality native-oxide-free gate oxide for future deep-submicron device application.
AB - In this paper, we grow and characterize in detail native-oxide-free ultra-thin gate oxide (Tox=2.4nm) by an advance clustered vertical furnace with in-situ HF-vapor stripping of the native oxide. Excellent results are demonstrated. Gate oxide integrity is significantly improved in terms of leakage, time-to-breakdown, breakdown field, interface-state-density, stress-induced leakage current, Id, and Gm. In-situ HF-vapor cleaning by a clustered vertical furnace therefore appears to be very promising to grow high-quality native-oxide-free gate oxide for future deep-submicron device application.
UR - http://www.scopus.com/inward/record.url?scp=0032599259&partnerID=8YFLogxK
U2 - 10.1109/VTSA.1999.786003
DO - 10.1109/VTSA.1999.786003
M3 - Conference article
AN - SCOPUS:0032599259
SN - 1524-766X
SP - 74
EP - 77
JO - International Symposium on VLSI Technology, Systems, and Applications, Proceedings
JF - International Symposium on VLSI Technology, Systems, and Applications, Proceedings
T2 - Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications
Y2 - 7 June 1999 through 10 June 1999
ER -