High quality mosfet's with N2O annealed thin TEOS gate oxide

S. C. Sun; H. Y. Chang; T. S. Chao; C. Y. Lu; S. W. Chang; K. Y. Lee; L. S. Lee

doi:10.1109/VTSA.1993.263638

High quality mosfet's with N₂O annealed thin TEOS gate oxide

S. C. Sun, H. Y. Chang, T. S. Chao, C. Y. Lu, S. W. Chang, K. Y. Lee, L. S. Lee

電子物理學系

研究成果: Conference contribution › 同行評審

摘要

This paper presents the electrical characteristics of MOSFETs utilizing thin (125 Å) TEOS deposited gate oxides. Results show that devices of TEOS oxide with N2O anneal have smaller initial drain current degradation under CHC stress condition. The transconduction degradation is slightly worse as compared to thermal gate oxide devices.

原文	English
主出版物標題	1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	109-111
頁數	3
ISBN（電子）	0780309782
DOIs	https://doi.org/10.1109/VTSA.1993.263638
出版狀態	Published - 1 1月 1993
事件	1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Taipei, Taiwan 持續時間: 12 5月 1993 → 14 5月 1993

出版系列

名字	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN（列印）	1930-8868

Conference

Conference	1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993
國家/地區	Taiwan
城市	Taipei
期間	12/05/93 → 14/05/93

存取文件

10.1109/VTSA.1993.263638

其它文件與鏈接

Link to publication in Scopus

引用此

Sun, S. C., Chang, H. Y., Chao, T. S., Lu, C. Y., Chang, S. W., Lee, K. Y., & Lee, L. S. (1993). High quality mosfet's with N₂O annealed thin TEOS gate oxide. 於 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers (頁 109-111). [263638] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VTSA.1993.263638

Sun, S. C. ; Chang, H. Y. ; Chao, T. S. 等. / High quality mosfet's with N₂O annealed thin TEOS gate oxide. 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 1993. 頁 109-111 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

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title = "High quality mosfet's with N2O annealed thin TEOS gate oxide",

abstract = "This paper presents the electrical characteristics of MOSFETs utilizing thin (125 {\AA}) TEOS deposited gate oxides. Results show that devices of TEOS oxide with N2O anneal have smaller initial drain current degradation under CHC stress condition. The transconduction degradation is slightly worse as compared to thermal gate oxide devices.",

author = "Sun, {S. C.} and Chang, {H. Y.} and Chao, {T. S.} and Lu, {C. Y.} and Chang, {S. W.} and Lee, {K. Y.} and Lee, {L. S.}",

year = "1993",

month = jan,

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doi = "10.1109/VTSA.1993.263638",

language = "English",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

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Sun, SC, Chang, HY, Chao, TS, Lu, CY, Chang, SW, Lee, KY & Lee, LS 1993, High quality mosfet's with N₂O annealed thin TEOS gate oxide. 於 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers., 263638, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, Institute of Electrical and Electronics Engineers Inc., 頁 109-111, 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993, Taipei, Taiwan, 12/05/93. https://doi.org/10.1109/VTSA.1993.263638

High quality mosfet's with N₂O annealed thin TEOS gate oxide. / Sun, S. C.; Chang, H. Y.; Chao, T. S. 等.

1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 1993. p. 109-111 263638 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

研究成果: Conference contribution › 同行評審

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N2 - This paper presents the electrical characteristics of MOSFETs utilizing thin (125 Å) TEOS deposited gate oxides. Results show that devices of TEOS oxide with N2O anneal have smaller initial drain current degradation under CHC stress condition. The transconduction degradation is slightly worse as compared to thermal gate oxide devices.

AB - This paper presents the electrical characteristics of MOSFETs utilizing thin (125 Å) TEOS deposited gate oxides. Results show that devices of TEOS oxide with N2O anneal have smaller initial drain current degradation under CHC stress condition. The transconduction degradation is slightly worse as compared to thermal gate oxide devices.

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BT - 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers

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Sun SC, Chang HY, Chao TS, Lu CY, Chang SW, Lee KY 等. High quality mosfet's with N₂O annealed thin TEOS gate oxide. 於 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers. Institute of Electrical and Electronics Engineers Inc. 1993. p. 109-111. 263638. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.1993.263638