High quality low-temperature GaAs film grown by conventional metalorganic chemical vapor deposition

Wei-Kuo Chen; Chen Shiung Chang; Wen Chung Chen

doi:10.1109/EDMS.1994.771209

High quality low-temperature GaAs film grown by conventional metalorganic chemical vapor deposition

Wei-Kuo Chen
, Chen Shiung Chang
, Wen Chung Chen

電子物理學系

研究成果 › 同行評審

摘要

This paper offers a convenient method to grow good quality of GaAs films at low-temperature (LT), 425 °C, by using conventional metalorganic chemical vapor deposition (MOCVD) growth technique and taking tertiarybutylarsine (TBAs) along with triethylgallium (TEGa) as the epitaxial sources. By taking the results from 77 K PL and double crystal X-ray, the film grown at 425 °C has shown a full width at half maximum (FWHM) 8.2 meV and 14 arcsec. These results indicate that high quality of GaAs films can be obtained by using conventional MOCVD technique without setting any extra and external equipments.

原文	English
頁面	4.8.29-4.8.32
頁數	4
DOIs	https://doi.org/10.1109/EDMS.1994.771209
出版狀態	Published - 12 7月 1994
事件	1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, 台灣持續時間: 12 7月 1994 → 15 7月 1994

Conference

Conference	1994 International Electron Devices and Materials Symposium, EDMS 1994
國家/地區	台灣
城市	Hsinchu
期間	12/07/94 → 15/07/94

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10.1109/EDMS.1994.771209

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title = "High quality low-temperature GaAs film grown by conventional metalorganic chemical vapor deposition",

abstract = "This paper offers a convenient method to grow good quality of GaAs films at low-temperature (LT), 425 °C, by using conventional metalorganic chemical vapor deposition (MOCVD) growth technique and taking tertiarybutylarsine (TBAs) along with triethylgallium (TEGa) as the epitaxial sources. By taking the results from 77 K PL and double crystal X-ray, the film grown at 425 °C has shown a full width at half maximum (FWHM) 8.2 meV and 14 arcsec. These results indicate that high quality of GaAs films can be obtained by using conventional MOCVD technique without setting any extra and external equipments.",

author = "Wei-Kuo Chen and Chang, \{Chen Shiung\} and Chen, \{Wen Chung\}",

note = "Publisher Copyright: {\textcopyright} 1994 IEEE.; 1994 International Electron Devices and Materials Symposium, EDMS 1994 ; Conference date: 12-07-1994 Through 15-07-1994",

year = "1994",

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doi = "10.1109/EDMS.1994.771209",

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TY - CONF

T1 - High quality low-temperature GaAs film grown by conventional metalorganic chemical vapor deposition

AU - Chen, Wei-Kuo

AU - Chang, Chen Shiung

AU - Chen, Wen Chung

PY - 1994/7/12

Y1 - 1994/7/12

N2 - This paper offers a convenient method to grow good quality of GaAs films at low-temperature (LT), 425 °C, by using conventional metalorganic chemical vapor deposition (MOCVD) growth technique and taking tertiarybutylarsine (TBAs) along with triethylgallium (TEGa) as the epitaxial sources. By taking the results from 77 K PL and double crystal X-ray, the film grown at 425 °C has shown a full width at half maximum (FWHM) 8.2 meV and 14 arcsec. These results indicate that high quality of GaAs films can be obtained by using conventional MOCVD technique without setting any extra and external equipments.

AB - This paper offers a convenient method to grow good quality of GaAs films at low-temperature (LT), 425 °C, by using conventional metalorganic chemical vapor deposition (MOCVD) growth technique and taking tertiarybutylarsine (TBAs) along with triethylgallium (TEGa) as the epitaxial sources. By taking the results from 77 K PL and double crystal X-ray, the film grown at 425 °C has shown a full width at half maximum (FWHM) 8.2 meV and 14 arcsec. These results indicate that high quality of GaAs films can be obtained by using conventional MOCVD technique without setting any extra and external equipments.

UR - https://www.scopus.com/pages/publications/85063564047

U2 - 10.1109/EDMS.1994.771209

DO - 10.1109/EDMS.1994.771209

M3 - Paper

AN - SCOPUS:85063564047

SP - 4.8.29-4.8.32

T2 - 1994 International Electron Devices and Materials Symposium, EDMS 1994

Y2 - 12 July 1994 through 15 July 1994

ER -

High quality low-temperature GaAs film grown by conventional metalorganic chemical vapor deposition

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