This paper offers a convenient method to grow good quality of GaAs films at low-temperature (LT), 425 °C, by using conventional metalorganic chemical vapor deposition (MOCVD) growth technique and taking tertiarybutylarsine (TBAs) along with triethylgallium (TEGa) as the epitaxial sources. By taking the results from 77 K PL and double crystal X-ray, the film grown at 425 °C has shown a full width at half maximum (FWHM) 8.2 meV and 14 arcsec. These results indicate that high quality of GaAs films can be obtained by using conventional MOCVD technique without setting any extra and external equipments.
|出版狀態||Published - 12 7月 1994|
|事件||1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan|
持續時間: 12 7月 1994 → 15 7月 1994
|Conference||1994 International Electron Devices and Materials Symposium, EDMS 1994|
|期間||12/07/94 → 15/07/94|