High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment

Tung Ming Pan; Tan Fu Lei; Wen Luh Yang; Chun Ming Cheng; Tien-Sheng Chao

doi:10.1109/55.902834

High quality interpoly-oxynitride grown by NH₃ nitridation and N₂O RTA treatment

Tung Ming Pan, Tan Fu Lei, Wen Luh Yang, Chun Ming Cheng, Tien-Sheng Chao

電子物理學系

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

摘要

In this letter, a method to grow high quality inter-polysilicon-oxynitride (interpoly-oxynitride) film is proposed. Samples, nitridized by NH₃ with additional N₂O annealing and CVD TEOS deposited on poly-oxynitride (poly-I) with RTA N₂O oxidation, show excellent electrical properties in terms of very high electric breakdown field, low leakage current, high charge to breakdown, and low electron trapping rate. This novel film is a good candidate for an interpoly dielectric of future high density EEPROM and flash memory devices.

原文	English
頁（從 - 到）	68-70
頁數	3
期刊	IEEE Electron Device Letters
卷	22
發行號	2
DOIs	https://doi.org/10.1109/55.902834
出版狀態	Published - 1 2月 2001

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10.1109/55.902834

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abstract = "In this letter, a method to grow high quality inter-polysilicon-oxynitride (interpoly-oxynitride) film is proposed. Samples, nitridized by NH3 with additional N2O annealing and CVD TEOS deposited on poly-oxynitride (poly-I) with RTA N2O oxidation, show excellent electrical properties in terms of very high electric breakdown field, low leakage current, high charge to breakdown, and low electron trapping rate. This novel film is a good candidate for an interpoly dielectric of future high density EEPROM and flash memory devices.",

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AU - Pan, Tung Ming

AU - Lei, Tan Fu

AU - Yang, Wen Luh

AU - Cheng, Chun Ming

AU - Chao, Tien-Sheng

PY - 2001/2/1

Y1 - 2001/2/1

N2 - In this letter, a method to grow high quality inter-polysilicon-oxynitride (interpoly-oxynitride) film is proposed. Samples, nitridized by NH3 with additional N2O annealing and CVD TEOS deposited on poly-oxynitride (poly-I) with RTA N2O oxidation, show excellent electrical properties in terms of very high electric breakdown field, low leakage current, high charge to breakdown, and low electron trapping rate. This novel film is a good candidate for an interpoly dielectric of future high density EEPROM and flash memory devices.

AB - In this letter, a method to grow high quality inter-polysilicon-oxynitride (interpoly-oxynitride) film is proposed. Samples, nitridized by NH3 with additional N2O annealing and CVD TEOS deposited on poly-oxynitride (poly-I) with RTA N2O oxidation, show excellent electrical properties in terms of very high electric breakdown field, low leakage current, high charge to breakdown, and low electron trapping rate. This novel film is a good candidate for an interpoly dielectric of future high density EEPROM and flash memory devices.

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High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment

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High quality interpoly-oxynitride grown by NH₃ nitridation and N₂O RTA treatment