High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices

Tien-Sheng Chao, Luh Yang Wen Luh Yang, C. M. Cheng, Ming Pan Tung Ming Pan, Fu Lei Tan Fu Lei

研究成果: Paper同行評審

1 引文 斯高帕斯(Scopus)

摘要

The irradiation of NH3 with rapid thermal annealing of (RTA) N2O incorporates nitrogen at dielectric/polysilicon interface was demonstrated to improve integrity of polyoxide. The deposition of polyoxide on nitrided polysilicon films with the densification of N2O exhibited lower leakage current, higher electric breakdown field, higher electron barrier height and lower electron trapping rate etc. The incorporation of nitrogen at the polyoxide/poly-1 interface also showed improved electrical properties.

原文English
頁面142-145
頁數4
DOIs
出版狀態Published - 1 一月 2001
事件2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings - Hsinchu, Taiwan
持續時間: 18 四月 200120 四月 2001

Conference

Conference2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings
國家/地區Taiwan
城市Hsinchu
期間18/04/0120/04/01

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