The irradiation of NH3 with rapid thermal annealing of (RTA) N2O incorporates nitrogen at dielectric/polysilicon interface was demonstrated to improve integrity of polyoxide. The deposition of polyoxide on nitrided polysilicon films with the densification of N2O exhibited lower leakage current, higher electric breakdown field, higher electron barrier height and lower electron trapping rate etc. The incorporation of nitrogen at the polyoxide/poly-1 interface also showed improved electrical properties.
|出版狀態||Published - 1 1月 2001|
|事件||2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings - Hsinchu, Taiwan|
持續時間: 18 4月 2001 → 20 4月 2001
|Conference||2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings|
|期間||18/04/01 → 20/04/01|