High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices

Tien-Sheng Chao; Luh Yang Wen Luh Yang; C. M. Cheng; Ming Pan Tung Ming Pan; Fu Lei Tan Fu Lei

doi:10.1109/VTSA.2001.934503

High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices

Tien-Sheng Chao, Luh Yang Wen Luh Yang, C. M. Cheng, Ming Pan Tung Ming Pan, Fu Lei Tan Fu Lei

電子物理學系

研究成果: Paper › 同行評審

1 引文斯高帕斯（Scopus）

摘要

The irradiation of NH₃ with rapid thermal annealing of (RTA) N₂O incorporates nitrogen at dielectric/polysilicon interface was demonstrated to improve integrity of polyoxide. The deposition of polyoxide on nitrided polysilicon films with the densification of N₂O exhibited lower leakage current, higher electric breakdown field, higher electron barrier height and lower electron trapping rate etc. The incorporation of nitrogen at the polyoxide/poly-1 interface also showed improved electrical properties.

原文	English
頁面	142-145
頁數	4
DOIs	https://doi.org/10.1109/VTSA.2001.934503
出版狀態	Published - 1 1月 2001
事件	2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings - Hsinchu, Taiwan 持續時間: 18 4月 2001 → 20 4月 2001

Conference

Conference	2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings
國家/地區	Taiwan
城市	Hsinchu
期間	18/04/01 → 20/04/01

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10.1109/VTSA.2001.934503

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引用此

Chao, T-S., Wen Luh Yang, L. Y., Cheng, C. M., Tung Ming Pan, M. P., & Tan Fu Lei, F. L. (2001). High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices. 142-145. 論文發表於 2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings, Hsinchu, Taiwan. https://doi.org/10.1109/VTSA.2001.934503

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title = "High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices",

abstract = "The irradiation of NH3 with rapid thermal annealing of (RTA) N2O incorporates nitrogen at dielectric/polysilicon interface was demonstrated to improve integrity of polyoxide. The deposition of polyoxide on nitrided polysilicon films with the densification of N2O exhibited lower leakage current, higher electric breakdown field, higher electron barrier height and lower electron trapping rate etc. The incorporation of nitrogen at the polyoxide/poly-1 interface also showed improved electrical properties.",

author = "Tien-Sheng Chao and {Wen Luh Yang}, {Luh Yang} and Cheng, {C. M.} and {Tung Ming Pan}, {Ming Pan} and {Tan Fu Lei}, {Fu Lei}",

year = "2001",

month = jan,

day = "1",

doi = "10.1109/VTSA.2001.934503",

language = "English",

pages = "142--145",

note = "null ; Conference date: 18-04-2001 Through 20-04-2001",

}

Chao, T-S, Wen Luh Yang, LY, Cheng, CM, Tung Ming Pan, MP & Tan Fu Lei, FL 2001, 'High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices', 論文發表於 2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings, Hsinchu, Taiwan, 18/04/01 - 20/04/01 頁 142-145. https://doi.org/10.1109/VTSA.2001.934503

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T1 - High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices

AU - Chao, Tien-Sheng

AU - Wen Luh Yang, Luh Yang

AU - Cheng, C. M.

AU - Tung Ming Pan, Ming Pan

AU - Tan Fu Lei, Fu Lei

PY - 2001/1/1

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N2 - The irradiation of NH3 with rapid thermal annealing of (RTA) N2O incorporates nitrogen at dielectric/polysilicon interface was demonstrated to improve integrity of polyoxide. The deposition of polyoxide on nitrided polysilicon films with the densification of N2O exhibited lower leakage current, higher electric breakdown field, higher electron barrier height and lower electron trapping rate etc. The incorporation of nitrogen at the polyoxide/poly-1 interface also showed improved electrical properties.

AB - The irradiation of NH3 with rapid thermal annealing of (RTA) N2O incorporates nitrogen at dielectric/polysilicon interface was demonstrated to improve integrity of polyoxide. The deposition of polyoxide on nitrided polysilicon films with the densification of N2O exhibited lower leakage current, higher electric breakdown field, higher electron barrier height and lower electron trapping rate etc. The incorporation of nitrogen at the polyoxide/poly-1 interface also showed improved electrical properties.

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U2 - 10.1109/VTSA.2001.934503

DO - 10.1109/VTSA.2001.934503

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EP - 145

Y2 - 18 April 2001 through 20 April 2001

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High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices

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