High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices

Wen Luh Yang*, Tien-Sheng Chao, Chun Ming Cheng, Tung Ming Pan, Tan Fu Lei

*此作品的通信作者

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

High quality interpoly dielectrics have been fabricated by using NH3 and N2O nitridation on polysilicon and deposition of tetra-ethyl-ortho-silicate (TEOS) oxide with N2O annealing. The surface roughness of polysilicon is improved and the value of weak bonds is reduced due to nitrogen incorporation at the interface, which improves the integrity of interpoly dielectrics. The improvements include a higher barrier height, breakdown strength, and charge-to-breakdown, and a lower leakage current and charge trapping rate than counterparts. It is found that this method can simutaneously improve both charge-to-breakdown (up to 20 C/cm2) and electric breakdown field (up to 17 MV/cm).

原文English
頁(從 - 到)1304-1309
頁數6
期刊IEEE Transactions on Electron Devices
48
發行號7
DOIs
出版狀態Published - 1 七月 2001

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