High quality GaN-based Schottky barrier diodes

K. H. Lee, S. J. Chang, P. C. Chang, Y. C. Wang, Cheng-Huang Kuo

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

We report the fabrication of GaN-based Schottky barrier diodes with multi- Mgx Ny /GaN buffer. Compared to conventional devices with a low-temperature GaN buffer, we achieved a six orders of magnitude smaller leakage current. It was also found that effective Schottky barrier height is larger for the proposed device due to the reduction in surface defect density by using the multi- Mgx Ny /GaN buffer.

原文English
文章編號132110
期刊Applied Physics Letters
93
發行號13
DOIs
出版狀態Published - 2008

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