High quality GaAs grown on Si-on-insulator compliant substrates

C. W. Pei*, J. B. Héroux, J. Sweet, W. I. Wang, J. Chen, Mau-Chung Chang

*此作品的通信作者

    研究成果: Conference article同行評審

    17 引文 斯高帕斯(Scopus)

    摘要

    A model based on dislocation theory was developed for the reduction of dislocations in the GaAs epitaxial growth on compliant substrates. GaAs epilayers were grown by molecular beam epitaxy (MBE) using silicon-on-insulator (SOI) as a substrate. The model developed described the mechanism for the reduction of dislocation density. The compliant growth improved the crystal quality of the epilayers on lattice-mismatched substrates. The current-voltage characteristics demonstrated better performance with dc gain larger than 10 and breakdown voltage higher than 7 volts.

    原文English
    頁(從 - 到)1196-1199
    頁數4
    期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
    20
    發行號3
    DOIs
    出版狀態Published - 1 5月 2002
    事件20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States
    持續時間: 1 10月 20013 10月 2001

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