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High quality (111)B GaAs, AlGaAs, AlGaAs/GaAs modulation doped heterostructures and a GaAs/InGaAs/GaAs quantum well
Albert Chin
*
, Paul Martin, Pin Ho, Jim Ballingall, Tan Hua Yu, John Mazurowski
*
此作品的通信作者
電子研究所
研究成果
:
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同行評審
49
引文 斯高帕斯(Scopus)
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Keyphrases
GaAs-AlGaAs
100%
Gallium Arsenide
100%
InGaAs
100%
GaAs Quantum Well
100%
AlGaAs
100%
Modulation-doped
100%
Doped Heterostructure
100%
Molecular Beam Epitaxy
20%
Low Carbon
20%
Photoluminescence
20%
Low Growth Temperature
20%
Diode Laser
20%
Carbon Incorporation
20%
Material Quality
20%
Heterostructure Field-effect Transistors
20%
GaAs(111)
20%
Laser Heterostructure
20%
Sheet Density
20%
Engineering
Aluminium Gallium Arsenide
100%
Gallium Arsenide
100%
Quantum Well
100%
Indium Gallium Arsenide
100%
Heterostructures
100%
Heterojunctions
10%
Field-Effect Transistor
10%
Low Growth Temperature
10%
Material Quality
10%
Carbon Incorporation
10%
Physics
Quantum Wells
100%
Heterojunctions
50%
Semiconductor Laser
50%
Field Effect Transistor
50%
Molecular Beam Epitaxy
50%
Photoluminescence
50%
Earth and Planetary Sciences
Aluminum Gallium Arsenide
100%
Heterojunctions
25%
Photoluminescence
25%
Molecular Beam Epitaxy
25%