High quality (111)B GaAs, AlGaAs, AlGaAs/GaAs modulation doped heterostructures and a GaAs/InGaAs/GaAs quantum well

Albert Chin*, Paul Martin, Pin Ho, Jim Ballingall, Tan Hua Yu, John Mazurowski

*此作品的通信作者

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47 引文 斯高帕斯(Scopus)

摘要

We report the successful growth of high quality molecular beam epitaxy (MBE) GaAs, AlGaAs, AlGaAs/GaAs modulation doped heterostructures and a GaAs/InGaAs/GaAs quantum well on GaAs (111)B substrates. Modulation doped heterostructures show a 77 K mobility of 145 500 cm2/V s with a sheet density of 5.0×1011 cm-2. Photoluminescence of (111)B GaAs indicates a lower carbon incorporation than achieved on (100) substrates. The low growth temperature and high material quality obtainable in (111)B growth will provide advantages for laser diodes and heterostructure field effect transistors.

原文English
頁(從 - 到)1899-1901
頁數3
期刊Applied Physics Letters
59
發行號15
DOIs
出版狀態Published - 1991

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