High-program/erase-speed SONOS with in situ silicon nanocrystals

Tsung Yu Chiang*, Tien-Sheng Chao, Y. H. Wu Yi-Hong, Wen Luh Yang

*此作品的通信作者

研究成果: Article同行評審

22 引文 斯高帕斯(Scopus)

摘要

In this letter, for the first time, we have successfully fabricated silicon-oxide-nitride-oxide-silicon (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method. This process is simple and compatible to modern IC processes. Different Si-NCs deposition times by in situ method were investigated at first. SONOS devices with embedded Si-NCs in silicon nitride exhibit excellent characteristics in terms of larger memory windows (<5.5 V), lower operation voltage, high P/E speed, and longer retention time (<108s for 13% charge loss).

原文English
頁(從 - 到)1148-1151
頁數4
期刊IEEE Electron Device Letters
29
發行號10
DOIs
出版狀態Published - 11 9月 2008

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