High-Power Switch Using LC Resonator and Asymmetric MOS Transistor for 5G Applications

You Da Chen, Albert Chin*

*此作品的通信作者

研究成果: Article同行評審

摘要

A Si-based series-shunt transmit/receive (TX/RX) switch with a high-power 1-dB compression point (P1 dB) of 29.2 dBm is demonstrated at 28 GHz for 5G communication. The proposed switch also exhibits low insertion losses of 2.86 dB/3.46 dB and reasonable isolations of 21.7 dB/19.1 dB for TX/RX modes, respectively. These excellent results were achieved by applying an LC resonator and stacked high-voltage asymmetric MOS transistors in a standard 0.18-μm CMOS process.

原文English
文章編號9321147
頁(從 - 到)304-307
頁數4
期刊IEEE Microwave and Wireless Components Letters
31
發行號3
DOIs
出版狀態Published - 三月 2021

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