摘要
A Si-based series-shunt transmit/receive (TX/RX) switch with a high-power 1-dB compression point (P1 dB) of 29.2 dBm is demonstrated at 28 GHz for 5G communication. The proposed switch also exhibits low insertion losses of 2.86 dB/3.46 dB and reasonable isolations of 21.7 dB/19.1 dB for TX/RX modes, respectively. These excellent results were achieved by applying an LC resonator and stacked high-voltage asymmetric MOS transistors in a standard 0.18-μm CMOS process.
原文 | English |
---|---|
文章編號 | 9321147 |
頁(從 - 到) | 304-307 |
頁數 | 4 |
期刊 | IEEE Microwave and Wireless Components Letters |
卷 | 31 |
發行號 | 3 |
DOIs | |
出版狀態 | Published - 3月 2021 |