High-Power Switch Using LC Resonator and Asymmetric MOS Transistor for 5G Applications

You Da Chen; Albert Chin

doi:10.1109/LMWC.2020.3047821

High-Power Switch Using LC Resonator and Asymmetric MOS Transistor for 5G Applications

You Da Chen, Albert Chin^*

^*此作品的通信作者

電子研究所

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

A Si-based series-shunt transmit/receive (TX/RX) switch with a high-power 1-dB compression point (P1 dB) of 29.2 dBm is demonstrated at 28 GHz for 5G communication. The proposed switch also exhibits low insertion losses of 2.86 dB/3.46 dB and reasonable isolations of 21.7 dB/19.1 dB for TX/RX modes, respectively. These excellent results were achieved by applying an LC resonator and stacked high-voltage asymmetric MOS transistors in a standard 0.18-μm CMOS process.

原文	English
文章編號	9321147
頁（從 - 到）	304-307
頁數	4
期刊	IEEE Microwave and Wireless Components Letters
卷	31
發行號	3
DOIs	https://doi.org/10.1109/LMWC.2020.3047821
出版狀態	Published - 3月 2021

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10.1109/LMWC.2020.3047821

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title = "High-Power Switch Using LC Resonator and Asymmetric MOS Transistor for 5G Applications",

abstract = "A Si-based series-shunt transmit/receive (TX/RX) switch with a high-power 1-dB compression point (P1 dB) of 29.2 dBm is demonstrated at 28 GHz for 5G communication. The proposed switch also exhibits low insertion losses of 2.86 dB/3.46 dB and reasonable isolations of 21.7 dB/19.1 dB for TX/RX modes, respectively. These excellent results were achieved by applying an LC resonator and stacked high-voltage asymmetric MOS transistors in a standard 0.18-μm CMOS process.",

keywords = "Insertion loss, P{\^a} dB, RF power, TX/RX switch, isolation, transceiver",

author = "Chen, {You Da} and Albert Chin",

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AU - Chin, Albert

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N2 - A Si-based series-shunt transmit/receive (TX/RX) switch with a high-power 1-dB compression point (P1 dB) of 29.2 dBm is demonstrated at 28 GHz for 5G communication. The proposed switch also exhibits low insertion losses of 2.86 dB/3.46 dB and reasonable isolations of 21.7 dB/19.1 dB for TX/RX modes, respectively. These excellent results were achieved by applying an LC resonator and stacked high-voltage asymmetric MOS transistors in a standard 0.18-μm CMOS process.

AB - A Si-based series-shunt transmit/receive (TX/RX) switch with a high-power 1-dB compression point (P1 dB) of 29.2 dBm is demonstrated at 28 GHz for 5G communication. The proposed switch also exhibits low insertion losses of 2.86 dB/3.46 dB and reasonable isolations of 21.7 dB/19.1 dB for TX/RX modes, respectively. These excellent results were achieved by applying an LC resonator and stacked high-voltage asymmetric MOS transistors in a standard 0.18-μm CMOS process.

KW - Insertion loss

KW - Pâ dB

KW - RF power

KW - TX/RX switch

KW - isolation

KW - transceiver

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High-Power Switch Using LC Resonator and Asymmetric MOS Transistor for 5G Applications

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