High-Power Single-Mode 1.3-μm Lasers Based on InAs/AlGaAs/GaAs Quantum Dot Heterostructures

D. A. Livshits*, A. R. Kovsh, A. E. Zhukov, N. A. Maleev, S. S. Mikhrin, A. P. Vasil'ev, E. V. Nikitina, V. M. Ustinov, N. N. Ledentsov, Gray Lin, J. Chi

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    10 引文 斯高帕斯(Scopus)

    摘要

    Single-mode lasers operating in the 1.3 μm wavelength range have been obtained with the active region based on InAs/AlGaAs/GaAs quantum dot heterostructures. A minimum threshold current of about 1.4 mA is reached, which is a record value for ridge waveguide lasers. The maximum efficiency and maximum output power in the cw lasing mode are 0.73 W/A and 120 mW, respectively.

    原文English
    頁(從 - 到)9-11
    頁數3
    期刊Technical Physics Letters
    30
    發行號1
    DOIs
    出版狀態Published - 1 1月 2004

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