High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells

A. R. Kovsh*, A. E. Zhukov, N. A. Maleev, S. S. Mikhrin, A. V. Vasil'ev, Yu M. Shernyakov, D. A. Livshits, M. V. Maximov, D. S. Sizov, N. V. Kryzhanovskaya, N. A. Pikhtin, V. A. Kapitonov, I. S. Tarasov, N. N. Ledentsov, V. M. Ustinov, J. S. Wang, L. Wei, Gray Lin, J. Y. Chi

*此作品的通信作者

    研究成果: Conference article同行評審

    摘要

    High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells (QW) were presented. High gain submonolayer quantum dots allowed to use broad waveguide design typical for high power laser based on QWs. The results demonstrated the potential of submonolayer technique to form active region of high power laser.

    原文English
    頁(從 - 到)353-356
    頁數4
    期刊Proceedings of SPIE - The International Society for Optical Engineering
    5023
    DOIs
    出版狀態Published - 15 9月 2003
    事件10th International Symposium on Nanostructures: Physics and Technology - St. Petersburg, Russian Federation
    持續時間: 17 6月 200221 6月 2002

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