@article{c4cbbc4ab6fe4bf2a6c428e7a241d1ec,
title = "High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells",
abstract = "High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells (QW) were presented. High gain submonolayer quantum dots allowed to use broad waveguide design typical for high power laser based on QWs. The results demonstrated the potential of submonolayer technique to form active region of high power laser.",
keywords = "Diode lasers, Molecular beam epitaxy, Semiconductor quantum dots",
author = "Kovsh, {A. R.} and Zhukov, {A. E.} and Maleev, {N. A.} and Mikhrin, {S. S.} and Vasil'ev, {A. V.} and Shernyakov, {Yu M.} and Livshits, {D. A.} and Maximov, {M. V.} and Sizov, {D. S.} and Kryzhanovskaya, {N. V.} and Pikhtin, {N. A.} and Kapitonov, {V. A.} and Tarasov, {I. S.} and Ledentsov, {N. N.} and Ustinov, {V. M.} and Wang, {J. S.} and L. Wei and Gray Lin and Chi, {J. Y.}",
year = "2003",
month = sep,
day = "15",
doi = "10.1117/12.514262",
language = "English",
volume = "5023",
pages = "353--356",
journal = "Proceedings of SPIE - The International Society for Optical Engineering",
issn = "0277-786X",
publisher = "SPIE",
note = "10th International Symposium on Nanostructures: Physics and Technology ; Conference date: 17-06-2002 Through 21-06-2002",
}