High-power GaN-mirror-Cu light-emitting diodes for vertical current injection using laser liftoff and electroplating techniques

W. Y. Lin*, D. S. Wuu, K. F. Pan, S. H. Huang, C. E. Lee, W. K. Wang, S. C. Hsu, Y. Y. Su, S. Y. Huang, Ray-Hua Horng

*此作品的通信作者

研究成果: Article同行評審

90 引文 斯高帕斯(Scopus)

摘要

A large-area (1 × 1 mm) vertical conductive GaN-mirror-Cu light-emitting diode (LED) fabricated using the laser liftoff and electroplating techniques is demonstrated. Selective p-GaN top area was first electroplated by the thick copper film, and then an excimer laser was employed to separate the GaN thin film from the sapphire substrate. The luminance intensity of the vertical conductive p-side-down GaN-mirror-Cu LED presented about 2.7 times in magnitude as compared with that of the original GaN-sapphire LED (at 20 mA). The light output power for the GaN-mirror-Cu LED was about twofold stronger (at 500 mA). A more stable peak wavelength shift under high current injection was also observed.

原文English
頁(從 - 到)1809-1811
頁數3
期刊IEEE Photonics Technology Letters
17
發行號9
DOIs
出版狀態Published - 1 9月 2005

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