High power efficiency X-band GaAlAs/GaAs HBT

N. L. Wang*, N. H. Sheng, Mau-Chung Chang, W. J. Ho, G. J. Sullivan, E. Sovero, J. A. Higgins, P. M. Asbeck

*此作品的通信作者

    研究成果: Paper同行評審

    4 引文 斯高帕斯(Scopus)

    摘要

    Excellent power performance from a common-emitter GaAlAs/GaAs HBT (heterojunction bipolar transistor) at 10 GHz is reported. Record high added efficiency of 67.8% and 11.6-dB associated gain were obtained, with 0.226-W output power. HBTs of various sizes were tested, and 55% added efficiency and 10-dB associated gain were obtained regularly. From the largest available device 0.63 W with 8-dB gain was obtained. The base current crowding effect does not appear in the HBTs tested. The operation of the HBT is analyzed and shown to be close to that of the class-B amplifier. The collector-current behavior with respect to the power level is explained. Harmonic content is found to be very low. Compared with other solid-state power devices at 10 GHz the HBT demonstrates the highest added efficiency and associated gain at high-output-power condition. In addition, the low HBT input Q factor eases broadband matching, making it the best candidate for microwave power application.

    原文English
    頁面160-166
    頁數7
    DOIs
    出版狀態Published - 1 12月 1989
    事件Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA
    持續時間: 7 8月 19899 8月 1989

    Conference

    ConferenceProceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
    城市Ithaca, NY, USA
    期間7/08/899/08/89

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