High power C-doped GaN photoconductive THz emitter

Brahm Pal Singh, Osamu Imafuji, Yutaka Hirose, Yasuyuki Fukushima, Shinichi Takigawa, Daisuke Ueda

    研究成果: Conference contribution同行評審

    1 引文 斯高帕斯(Scopus)

    摘要

    We report for the first time a carbon-doped gallium nitride based large aperture photoconductive switch grown on the sapphire substrate to generate high power sub-THz waves. The estimated THz wave energy was about 1.5pJ/pulse when this device was pumped by a 266nm wavelength femtosecond laser operating at 1 kHz pulse rate with the average power of 20mW under the dc bias voltage of 110V. The terahertz time domain spectroscopy was performed using a low temperature grown gallium arsenide photoconductive switch detector and the frequency spectrum was found to be in the 0.1-0.2 THz regime.

    原文English
    主出版物標題IRMMW-THz2007 - Conference Digest of the Joint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics
    頁面1004-1005
    頁數2
    DOIs
    出版狀態Published - 1 十二月 2007
    事件Joint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics, IRMMW-THz2007 - Cardiff, United Kingdom
    持續時間: 3 九月 20077 九月 2007

    出版系列

    名字IRMMW-THz2007 - Conference Digest of the Joint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics

    Conference

    ConferenceJoint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics, IRMMW-THz2007
    國家/地區United Kingdom
    城市Cardiff
    期間3/09/077/09/07

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