High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding

Wei Chih Peng, Yew-Chuhg Wu*

*此作品的通信作者

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

The high-power AlGaInP light-emitting diodes (LED) fabricated on Cu substrates were analyzed. The indium-tin-oxide as the diffusion barrier layer was used to bond the AlGaInP LED structure to a Cu substrate. It was shown that Cu-substrate-bonded LED devices could be operated in a much higher injection forward current, 800 mA. The results show that the luminous intensity of the Cu-substrate LEDs could reach as high as 1230 mcd, which is three times higher than that of the GaAs substrate LEDs.

原文English
頁(從 - 到)1841-1843
頁數3
期刊Applied Physics Letters
84
發行號11
DOIs
出版狀態Published - 15 三月 2004

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