High-power (200 mW) singlemode operation of InGaAsN/GaAs ridge waveguide lasers with wavelength around 1.3 μm

A. R. Kovsh*, J. S. Wang, R. S. Hsiao, L. P. Chen, D. A. Livshits, Kuo-Jui Lin, V. M. Ustinov, J. Y. Chi

*此作品的通信作者

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

High-power narrow ridge waveguide lasers emitting with wavelength around 1.3 μm were realised with a single In 0.36 GaAsN 0.022 quantum well with GaAs barriers. Narrow vertical far-field angle of 35° was obtained. Single lateral mode continuous-wave operation with slope efficiency of 0.57 W/A, series resistance of 2.6 Ω, and kink-free output power of 210 mW was achieved.

原文English
頁(從 - 到)1726-1728
頁數3
期刊Electronics Letters
39
發行號24
DOIs
出版狀態Published - 27 11月 2003

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