@article{caea192b4623428eac2d645de115328e,
title = "High-power (200 mW) singlemode operation of InGaAsN/GaAs ridge waveguide lasers with wavelength around 1.3 μm",
abstract = "High-power narrow ridge waveguide lasers emitting with wavelength around 1.3 μm were realised with a single In0.36GaAsN0.022 quantum well with GaAs barriers. Narrow vertical far-field angle of 35° was obtained. Single lateral mode continuous-wave operation with slope efficiency of 0.57 W/A, series resistance of 2.6 Ω, and kink-free output power of 210 mW was achieved.",
author = "Kovsh, {A. R.} and Wang, {J. S.} and Hsiao, {R. S.} and Chen, {L. P.} and Livshits, {D. A.} and Kuo-Jui Lin and Ustinov, {V. M.} and Chi, {J. Y.}",
year = "2003",
month = nov,
day = "27",
doi = "10.1049/el:20031085",
language = "English",
volume = "39",
pages = "1726--1728",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "24",
}